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M5M4257L-12 Dataheets PDF



Part Number M5M4257L-12
Manufacturers Mitsubishi
Logo Mitsubishi
Description 256K-Bit DRAM
Datasheet M5M4257L-12 DatasheetM5M4257L-12 Datasheet (PDF)

MITSUBISHI LSls M5M4257L.12, ·15, ·20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at r.

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MITSUBISHI LSls M5M4257L.12, ·15, ·20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the 16 pin zigzag inline package configuration and an increase in system densities_ In addition to the RAS only refresh mode, the Hidden refresh mode and CAS before RAS refresh mode are available_ FEATURES Type name Access time (max) (ns) Cycle tIme (min) (ns) Power diSSipation (typ) (mW) M5M4257L-12 120 230 260 M5M4257.


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