Document
(Rev. 1.1)
MITSUBISHI LSIs
M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
DESCRIPTION
The M5M467405/465405BJ,BTP is organized 16777216-word by 4-bit, M5M467805/465805BJ,BTP is organized 8388608-word by 8-bit, and M5M465165BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are suitable for large-capacity memory systems with high speed and low power dissipation. The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
FEATURES
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RAS
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