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M5M44405CJ-6 Dataheets PDF



Part Number M5M44405CJ-6
Manufacturers Mitsubishi
Logo Mitsubishi
Description EDO 4M-Bit DRAM
Datasheet M5M44405CJ-6 DatasheetM5M44405CJ-6 Datasheet (PDF)

MITMSIUTSBUISBHISI LHSI ILsSIs M5M44405CJM,T5MP4-4540,-56C,J-,T7P,--55,-S6,,-7-,6-5SS,,--67SS,-7S EDOED(OHY( PHEYRPEPRAGPAEGMEOMDOED) E41)9441390443-0B4IT-B(IT10(4180547865-7W6O-WRODRBDYB4Y-B4IT-B)ITDY) NDAYNMAICMRICARMAM DESCRIPTION This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential. The use of quadruple-layer polysilicon pro.

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MITMSIUTSBUISBHISI LHSI ILsSIs M5M44405CJM,T5MP4-4540,-56C,J-,T7P,--55,-S6,,-7-,6-5SS,,--67SS,-7S EDOED(OHY( PHEYRPEPRAGPAEGMEOMDOED) E41)9441390443-0B4IT-B(IT10(4180547865-7W6O-WRODRBDYB4Y-B4IT-B)ITDY) NDAYNMAICMRICARMAM DESCRIPTION This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential. The use of quadruple-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. PIN CONFIGURATION (TOP VIEW) DQ1 1 DQ2 2 W3 RAS 4 A9 5 26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE FEATURES Type name RAS access time (max.ns) CAS access time (max.ns) Address a.


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