M5M44800CJ-7

MITMSIUTBSIUSBHIISHLSI ILsSIs M5MM5M444488000C0JC,TPJ-,5T,-6P,--75,-5,-S6,-,6-S7,-,7S -5S,-6S,-7S FAFSATSPTAPGAEGMEOMDOED4E19441390443-0B4I-TB(I5T2(45228482-8W8-OWRODRBDYB8Y-B8I-TB)IDT)YDNYANMAICMIRCARMAM DESCRIPTION This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. FEATURES Type name RAS CAS Address OE access access access access time time time time Cycle time Power dissipa- tion (max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW) M5M44800CXX-5,-5S 50 13 25 13 90 450 M...