Document
MITSUBISHI LSIs
M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
FEATURES
Type Name
M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M417400CXX-7,-7S
RAS access
time (max.ns)
50
60
70
CAS access
time (max.ns)
13
15
20
Address access
time (max.ns)
25
30
35
OE access
time (max.ns)
13
15
20
C ycle time (min.ns)
90
110
130
Power dissipa-
tion (typ.mW)
655
540
475
XX=J, TP
• Standard 26 pin SOJ, 26 pin TSOP
• Single 5V ± 10.