N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS RDSON (MAX.) ID ...
N & P‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS RDSON (MAX.) ID
N‐CH 60V 37mΩ 12A
P‐CH ‐60V 90mΩ ‐7A
D1 G1
S1
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
D2 G2
S2
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
2012/7/24
ID IDM PD Tj, Tstg
TYPICAL
EMB37C06A
LIMITS
N‐CH
P‐CH
±20 ±20
12 ...