N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
65mΩ
ID ...
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
65mΩ
ID 15A G
UIS, 100% Tested Pb-Free Lead Plating & Halogen Free
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=23A, RG=25Ω L = 0.05mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient3
RθJA
1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1％
TYPICAL
EMB70N08C
LIMITS ±20 15 10 60 23 27 13 39 15
-55 to 150
UNIT V A
mJ W °C
MAXIMUM 3.2 50
UNIT °C / W
2013/7/22
p.1
EMB70N08C
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise N...
