Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.) ...
Dual N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
17mΩ
ID 16A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB17A03H
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
16 10 64
Avalanche Current
IAS 16
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
EAS EAR
5 2.5
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
25 10 ‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=10A, Rated VDS=30V N‐CH THERMAL RESISTANCE RATINGS
THE...
