EMB12P04V

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐22A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐18A, RG=25Ω L = 0.05mH Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. TYPICAL EMB12P04V LIMITS ±20 ‐22 ‐14 ‐88 ‐18 16.2 8.1 2.5 1 ‐55 to 150 UNIT V A mJ W °C MAXIMUM 6 50 UNIT °C / W 2013/12/17 p.1 EMB12P04V ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐32V, VGS = 0V VDS = ‐30V, VGS = 0V, TJ = 125 °C VDS = ‐5V, V...