N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
...
N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
11.5mΩ
ID 9A UIS, Rg 100% Tested
G S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
G D D
PIN 1
SYMBOL
EMB12N03VAT
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
±20 9 5.9 36 10 5 2.5
2.08 1.33 ‐55 to 150
V A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to...
