Document
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
45mΩ
ID 3.6A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS ID IDM PD Tj, Tstg
TYPICAL
Junction‐to‐Ambient3
RJA (T ≤ 10sec) RJA (Steady State)
1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 3The device mounted on a 1 in2 pad of 2 oz copper.
2016/2/17
EMF50N02JS
LIMITS ±12 3.6 2.9 14 1.04 0.66.