RBS3LAM40B

RBS3LAM40B Schottky Barrier Diode 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 20 V Io 3 A IFSM 60 A 　 　 　 ●Features High reliability Small power mold type Super low VF ●Inner Circuit Data sheet 　 　 　 　 　 　 　 　 　 　　　 ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 12 ●Structure Quantity(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking B4 ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 40 V Reverse voltage Average rectified forward current VR Reverse direct voltage 20 V Glass epoxy mounted、 Io 60Hz half sin waveform、resistive load、 3 A Tc=82℃ Max. Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 60 A Junction temperature(1) Tj - 125 ℃ Storage temperature Tstg - -55 ～ 125 ℃ Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dPd/dTj<1/Rth(j-a). ●Characteristics (Tj=25ºC unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=3A - 0.40 0.45 V Reverse current IR VR=20V - 300 600 μA Attention 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　　　　　　　　　　　　　　　 www.rohm.com © 2017- ROHMCo., Ltd.All rights reserved. 1/5 　 2022/01/18_Rev.003 RBS3LAM40B ●Characteristic Curves 　 ...