RB160L-90

Data Sheet Schottky Barrier Diode RB160L-90 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 Features 1)Small power mold type.（PMDS） 2) Low IR. 3)High reliability Construction Silicon epitaxial planer 2.6±0.2 46 ①② 1.5±0.2 0.1±0.02 　　　 0.1 2.0±0.2 PMDS Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 0.3 5.3±0.1 　 0.05 9.5±0.1 5.5±0.05 1.75±0.1 12±0.2 2.9±0.1 4.0±0.1 φ1.55 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature VRM VR Io IFSM Tj Storage temperature Tstg (*1)Mounting on epoxy board. 180°Half sine wave Limits 95 90 1 30 150 40 to 150 Unit V V A A C C Electrical characterist...