RB021VAM90

Schottky Barrier Diode RB021VAM90 Data Sheet lApplication General rectification lDimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17±0.04 0.6±0.1 lLand Size Figure (Unit : mm) 1.1 0.8 0.5 2.0 (1) lFeatures 1) Small mold type (TUMD2M) 2) High reliability 3) Low VF 2.0±0.1 2.5±0.1 0～0.1 (2) ROHM : TUMD2M Manufacture date and factory TUMD2M lStructure (1)Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 4.0±0.1 Φ 1.5 +0.1 -0 (2) Anode 0.25±0.05 1.75±0.1 3.5±0.05 8.0±0.2 5.5±0.2 2.8±0.05 1.53±0.03 Φ +0.2 1.0 -0 0.9±0.08 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage VRM Duty≦0.5 90 V Reverse Voltage VR Direct Reverse Voltage Average Forward Rectified Current Non-repetitive Forward Current Surge Peak Io IFSM Glass epoxy board mounted, 60Hz half sin Wave, resistive load, Tc=105°C Max. 60Hz half sin wave, Non-repetitive at ...