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SQJ411EP Dataheets PDF



Part Number SQJ411EP
Manufacturers Vishay
Logo Vishay
Description Automotive P-Channel MOSFET
Datasheet SQJ411EP DatasheetSQJ411EP Datasheet (PDF)

www.vishay.com SQJ411EP Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 Top View 5.13 mm PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -4.5 V RDS(on) () at VGS = -2.5 V ID (A) Configuration Package D 1 2S 3S 4S G Bottom View -12 0.0058 0.0087 -60 Single PowerPAK SO-8L FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912.

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www.vishay.com SQJ411EP Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 Top View 5.13 mm PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -4.5 V RDS(on) () at VGS = -2.5 V ID (A) Configuration Package D 1 2S 3S 4S G Bottom View -12 0.0058 0.0087 -60 Single PowerPAK SO-8L FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TC = 25 °C a TC = 125 °C L = 0.1 mH TC = 25 .


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