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www.vishay.com
SQJ411EP
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1 Top View
5.13 mm
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -4.5 V RDS(on) () at VGS = -2.5 V ID (A) Configuration Package
D
1 2S 3S 4S G Bottom View
-12 0.0058 0.0087
-60 Single PowerPAK SO-8L
FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
S
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C a TC = 125 °C
L = 0.1 mH TC = 25 .