SQJ416EP

www.vishay.com SQJ416EP Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package 100 0.030 27 Single PowerPAK SO-8L PowerPAK® SO-8L Single FEATURES TrenchFET® power MOSFET AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D 6.15 mm 1 Top View 5.13 mm D 1 2S 3S 4S G Bottom View G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VGS ID IS IDM IAS EAS PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperatur...