SQJB80EP

www.vishay.com SQJB80EP Vishay Siliconix Automotive Dual N-Channel 80 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Dual 6.15 mm 1 Top View 5.13 mm D1 D2 1 2 S1 3 G1 4 S2 G2 Bottom View FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration Package 80 0.0190 0.0240 30 Dual PowerPAK SO-8L G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage Continuous drain current Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b Operating junction and storage temperature range Soldering recommendations (peak temperature) ...