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SQJQ900E Dataheets PDF



Part Number SQJQ900E
Manufacturers Vishay
Logo Vishay
Description Automotive Dual N-Channel MOSFET
Datasheet SQJQ900E DatasheetSQJQ900E Datasheet (PDF)

www.vishay.com SQJQ900E Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8L Dual 1 Top View 8.1 mm D1 D2 1 2 G1 3 S1 4 S2 G2 Bottom View FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Fully lead (Pb)-free device • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 8 mm PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuratio.

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www.vishay.com SQJQ900E Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8L Dual 1 Top View 8.1 mm D1 D2 1 2 G1 3 S1 4 S2 G2 Bottom View FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Fully lead (Pb)-free device • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 8 mm PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration Package 40 0.0039 0.0047 100 Dual PowerPAK 8 x 8L G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b Operating junction and storage temperature range Soldering recommendat.


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