Document
www.vishay.com
SQJQ900E
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® 8 x 8L Dual
1 Top View
8.1 mm
D1
D2
1 2 G1 3 S1 4 S2 G2 Bottom View
FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Fully lead (Pb)-free device • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D1 D2
8 mm
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration Package
40 0.0039 0.0047
100 Dual PowerPAK 8 x 8L
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range Soldering recommendat.