CB45000

® CB45000 SERIES HCMOS6 STANDARD CELLS FEATURES s s s s s s s s s s s 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 160 ps (typ) with fanout = 2. Broad I/O functionality including Low Voltage CMOS, Low Voltage TTL and LVDS. Driving capability to ISA, EISA, PCI, MCA, and SCSI interface levels High drive I/O; capability of sinking up to 24 mA with slew rate control, current spike suppression and impedance matching. Generators to support Single Port RAM, Dual Port RAM, and ROM with BIST options. DRAM integration in ASIC methodology Extensive embedded function library including ST DSP and micro cores, third party micros and Synopsys synthetic libraries. Fully independent power and ground configurations for inputs, core and outputs. I/O ring capability up to 1000 pads. Latchup trigger current > +/- 500 mA. ESD protection > +/- 4000 volts typical value s s s s s Oscillators for wide frequency spectrum. Broad range of 500+ SSI cells Design For Test features including IEEE 1149.1 JTAG Boundary Scan architecture. Cadence, Mentor and Synopsys based design systems with interfaces from multiple workstations. Broad ceramic and plastic package range. CB45000 Super-Integration Cost Effective Product Architecture Partitioning s Trouble free integration s Application Specific s ROM DSP DPRAM ST20 Your Product i...