SQM40031EL

www.vishay.com SQM40031EL Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET TO-263 S G Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration Package D P-Channel MOSFET -40 0.00300 0.00380 -120 Single TO-263 FEATURES TrenchFET® power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912         ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Continuous Source Current (Diode conduction) a TC = 25 °C TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C VDS VGS ID IS ...