N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
15V
D
RDSON (MAX.)
...
N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
15V
D
RDSON (MAX.)
7mΩ
ID 65A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EME07N02A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=35A, RG=25Ω
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS PD
Tj, Tstg
±8 65 41 160 35 61.25 50 20 ‐55 to 150
V
A
mJ W °C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=20A, Rated VDS=15V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
...
