S29C51002B

SyncMOS Technologies Inc. S29C51002T/S29C51002B 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 35ms (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100mA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.5V s Self-timed write/erase operations with end-of-cycle detection – DATA Polling – Toggle Bit s CMOS and TTL Interface s Available in one versions – S29C51002T (Top Boot Block) s Packages: – 32-pin Plastic DIP – 32-pin TSOP-I – 32-pin PLCC Description TheS29C51002T/S29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done wi...