Document
EMB03P03A
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
3.3mΩ
ID
‐85A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
‐85
ID
TC = 100 °C
‐65
IDM
‐260
Avalanche Current
IAS
‐80
Avalanche Energy
L = 0.1mH, ID=‐80A, RG=25Ω
EAS
320
Repetitive Avalanche Energy2
L = 0.05mH
EAR
160
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
121 48 ‐55 to 150
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐50A, Rated VDS=‐30V P‐CH THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
Junction‐to‐Case
RJC
1.03
Junction‐to‐Ambient3
RJA
62.5
1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
UNIT V A
mJ W °C
UNIT °C / W
2016/3/9 p.1
EMB03P03A
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐24V, VGS = 0V VDS = ‐20V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS = ‐10V VGS = ‐10V, ID = ‐30A VGS = ‐4.5V, ID = ‐30A
VDS = ‐5V, ID = ‐30A
DYNAMIC
‐30
V
‐1 ‐1.5 ‐3
±100 nA
‐1 A ‐10
‐85
A
2.9 3.3 mΩ
4.2 5.2
70
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate‐Source Charge1,2 Gate‐Drain Charge1,2 Turn‐On Delay Time1,2 Rise Time1,2 Turn‐Off Delay Time1,2 Fall Time1,2
Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0V, VDS = ‐15V, f = 1MHz
VGS = 15mV, VDS = 0V, f = 1MHz VDS = ‐15V, VGS = ‐10V, ID = ‐30A
VDS = ‐15V, ID = ‐1A, VGS = ‐10V, RGS = 2.7Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current Pulsed Current3 Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge
IS
ISM
VSD
IF = ‐30A, VGS = 0V
trr
IF = IS, dlF/dt = 100A / S
Qrr
6400
913
pF
656
3.4
Ω
96.5
24.8
nC
13.8
15
20
nS
130
55
‐85 A
‐260
‐1.2 V
26
nS
80
nC
2016/3/9 p.2
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB03P03A for DPAK (TO‐252)
B03
P03
ABCDEFG
B03P03: Device Name ABCDEFG: Date Code
Outline Drawing
E E2
L
D
L2
D3
B2 B1
P
B
D2
H
L1
EMB03P03A
A C L3
A1
Dimension in mm
Dimension A
A1
B
B1 B2
C
D
D2 D3
E
E2
H
L
L1
L2
L3
P
Min.
2.10 0.95 0.30 0.40 0.60 0.40 5.30 6.70 2.20 6.40 4.80 9.20 0.89 0.90 0.50 0.00 2.10
Max.
2.50 1.30 0.85 0.94 1.00 0.60 6.20 7.30 3.00 6.70 5.45 10.15 1.70 1.65 1.10 0.30 2.50
2016/3/9 p.3
‐ID‐ Drain Current( A )
DS(on) R ‐ Normalized Drain‐Source On‐Resistance
EMB03P03A
150 VGS =‐10V
120
90
On‐Region Characteristics
‐7.0V ‐5.0V ‐4.5V
60 30
0
0
1
2
3
‐VDS ‐ Drain‐Source Voltage( V )
On‐Resistance Variation with Temperature 1.9
ID = ‐ 30 A VGS = ‐ 10V 1.6
1.3
1.0
0.7
0.4
‐50 ‐25 0
25 50 75 100 125 150
TJ ‐ Junction Temperature ( °C )
80 VDS = - 5V
60
40
Transfer Characteristics
- 55°C
25°C
TA = 125°C
20
0
1.5
2
2.5
3
3.5
4
-VGS - Gate-Source Voltage( V )
‐Is ‐ Reverse Drain Current( A )
R DS(ON) ‐ On‐Resistance( Ω )
RDS(ON), Normalized Drain‐Source On‐Resistance
On‐Resistance Variation with Drain Current and Gate Voltage 2.6
2.4
2.2
2.0
1.8
1.6 VGS= ‐4.5V
1.4
‐5.0V
1.2
1.0
‐7.0V ‐10V
0.0
0
30
60
90
120
150
‐ ID, Drain Current( A )
0.013 0.011 0.009
On‐Resistance Variation with Gate‐Source Voltage I D = ‐ 30 A
0.007
0.005
0.003
0.001 2
TA = 125°C TA = 25°C
4
6
8
10
‐ VGS‐ Gate‐Source Voltage( V )
Body Diode Forward Voltage Variation
100
with Source Current and Temperature
10 VGS = 0V
1
0.1
TA = 125°C 25°C
0.01
‐55°C
0.001 0
0.2 0.4
0.6 0.8 1.0 1.2
1.4
‐VSD ‐ Body Diode Forward Voltage( V )
-ID- Drain Current( A )
2016/3/9 p.4
‐ VGS ‐ Gate‐Source Voltage( V )
‐ID, Drain Current( A )
EMB03P03A
10 ID = ‐ 30A
8
6
Gate Charge Characteristics
VDS = ‐ 5V ‐ 15V
‐ 10V
4
2
0
0
20
40
60
80
100
Q g ‐ Gate Charge( nC )
Capacitance( pF )
10000 8000 6000 4000 2000
0 0
Capacitance Characteristics Ciss
f = 1 MHz VGS = 0 V
Coss
Crss
5
10
15
20
25
30
‐ VDS, Drain‐Sour.