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EMB03P03A Dataheets PDF



Part Number EMB03P03A
Manufacturers Excelliance MOS
Logo Excelliance MOS
Description MOSFET
Datasheet EMB03P03A DatasheetEMB03P03A Datasheet (PDF)

EMB03P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.3mΩ ID ‐85A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐85 ID TC = 100 °C ‐65 IDM ‐260 Avalanche Current IAS ‐80 Avalanche Energy L = 0.1mH, ID=‐.

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EMB03P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.3mΩ ID ‐85A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐85 ID TC = 100 °C ‐65 IDM ‐260 Avalanche Current IAS ‐80 Avalanche Energy L = 0.1mH, ID=‐80A, RG=25Ω EAS 320 Repetitive Avalanche Energy2 L = 0.05mH EAR 160 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 121 48 ‐55 to 150 100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐50A, Rated VDS=‐30V P‐CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction‐to‐Case RJC 1.03 Junction‐to‐Ambient3 RJA 62.5 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% UNIT V A mJ W °C UNIT °C / W 2016/3/9 p.1 EMB03P03A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐24V, VGS = 0V VDS = ‐20V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS = ‐10V VGS = ‐10V, ID = ‐30A VGS = ‐4.5V, ID = ‐30A VDS = ‐5V, ID = ‐30A DYNAMIC ‐30 V ‐1 ‐1.5 ‐3 ±100 nA ‐1 A ‐10 ‐85 A 2.9 3.3 mΩ 4.2 5.2 70 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate‐Source Charge1,2 Gate‐Drain Charge1,2 Turn‐On Delay Time1,2 Rise Time1,2 Turn‐Off Delay Time1,2 Fall Time1,2 Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, VDS = ‐15V, f = 1MHz VGS = 15mV, VDS = 0V, f = 1MHz VDS = ‐15V, VGS = ‐10V, ID = ‐30A VDS = ‐15V, ID = ‐1A, VGS = ‐10V, RGS = 2.7Ω SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Pulsed Current3 Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge IS ISM VSD IF = ‐30A, VGS = 0V trr IF = IS, dlF/dt = 100A / S Qrr 6400 913 pF 656 3.4 Ω 96.5 24.8 nC 13.8 15 20 nS 130 55 ‐85 A ‐260 ‐1.2 V 26 nS 80 nC 2016/3/9 p.2 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Ordering & Marking Information: Device Name: EMB03P03A for DPAK (TO‐252) B03 P03 ABCDEFG B03P03: Device Name ABCDEFG: Date Code Outline Drawing E E2 L D L2 D3 B2 B1 P B D2 H L1 EMB03P03A A C L3 A1 Dimension in mm Dimension A A1 B B1 B2 C D D2 D3 E E2 H L L1 L2 L3 P Min. 2.10 0.95 0.30 0.40 0.60 0.40 5.30 6.70 2.20 6.40 4.80 9.20 0.89 0.90 0.50 0.00 2.10 Max. 2.50 1.30 0.85 0.94 1.00 0.60 6.20 7.30 3.00 6.70 5.45 10.15 1.70 1.65 1.10 0.30 2.50 2016/3/9 p.3 ‐ID‐ Drain Current( A ) DS(on) R ‐ Normalized Drain‐Source On‐Resistance EMB03P03A 150 VGS =‐10V 120 90 On‐Region Characteristics ‐7.0V ‐5.0V ‐4.5V 60 30 0 0 1 2 3 ‐VDS ‐ Drain‐Source Voltage( V ) On‐Resistance Variation with Temperature 1.9 ID = ‐ 30 A VGS = ‐ 10V 1.6 1.3 1.0 0.7 0.4 ‐50 ‐25 0 25 50 75 100 125 150 TJ ‐ Junction Temperature ( °C ) 80 VDS = - 5V 60 40 Transfer Characteristics - 55°C 25°C TA = 125°C 20 0 1.5 2 2.5 3 3.5 4 -VGS - Gate-Source Voltage( V ) ‐Is ‐ Reverse Drain Current( A ) R DS(ON) ‐ On‐Resistance( Ω ) RDS(ON), Normalized Drain‐Source On‐Resistance On‐Resistance Variation with Drain Current and Gate Voltage 2.6 2.4 2.2 2.0 1.8 1.6 VGS= ‐4.5V 1.4 ‐5.0V 1.2 1.0 ‐7.0V ‐10V 0.0 0 30 60 90 120 150 ‐ ID, Drain Current( A ) 0.013 0.011 0.009 On‐Resistance Variation with Gate‐Source Voltage I D = ‐ 30 A 0.007 0.005 0.003 0.001 2 TA = 125°C TA = 25°C 4 6 8 10 ‐ VGS‐ Gate‐Source Voltage( V ) Body Diode Forward Voltage Variation 100 with Source Current and Temperature 10 VGS = 0V 1 0.1 TA = 125°C 25°C 0.01 ‐55°C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ‐VSD ‐ Body Diode Forward Voltage( V ) -ID- Drain Current( A ) 2016/3/9 p.4 ‐ VGS ‐ Gate‐Source Voltage( V ) ‐ID, Drain Current( A ) EMB03P03A 10 ID = ‐ 30A 8 6 Gate Charge Characteristics VDS = ‐ 5V ‐ 15V ‐ 10V 4 2 0 0 20 40 60 80 100 Q g ‐ Gate Charge( nC ) Capacitance( pF ) 10000 8000 6000 4000 2000 0 0 Capacitance Characteristics Ciss f = 1 MHz VGS = 0 V Coss Crss 5 10 15 20 25 30 ‐ VDS, Drain‐Sour.


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