Document
CBR1-D020S SERIES SURFACE MOUNT 1 AMP
SILICON BRIDGE RECTIFIER
SMDIP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. NOTE: Also available in Fast Recovery, please contact factory for details.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reve
Average Forward Current (TA=50°C) Peak Forward Surge Current
Rating for Fusing (t<8.35ms)
Operating and Storage Junction Temperature
SYMBOL VRRM VR
VR(RMS) IO
IFSM I2t
TJ, Tstg
CBR1D020S
200
200
140
CBR1D040S
400
400
280
CBR1D060S
600 600 420 1.0 50 10
CBR1D080S
800
800
560
CBR1D100S
1000
1000
700
UNITS V V V A A A2s
-65 to +150
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR VR=Rated VRRM IR VR=Rated VRRM, TA=125°C VF IF=1.0A CJ VR=4.0V, f=1.0MHz
25
MAX 10 0.5 1.1
UNITS µA mA V pF
R3 (4-January 2010)
CBR1-D020S SERIES SURFACE MOUNT 1 AMP
SILICON BRIDGE RECTIFIER
SMDIP CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m
R3 (4-January 2010)
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