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CBR1-D040S Dataheets PDF



Part Number CBR1-D040S
Manufacturers Central Semiconductor Corp
Logo Central Semiconductor Corp
Description 1.0 AMP DUAL IN LINE BRIDGE RECTIFIER
Datasheet CBR1-D040S DatasheetCBR1-D040S Datasheet (PDF)

CBR1-D020S SERIES SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER SMDIP CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. NOTE: Also available in Fast Recovery, please contact factory for details. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking V.

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CBR1-D020S SERIES SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER SMDIP CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. NOTE: Also available in Fast Recovery, please contact factory for details. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reve Average Forward Current (TA=50°C) Peak Forward Surge Current Rating for Fusing (t<8.35ms) Operating and Storage Junction Temperature SYMBOL VRRM VR VR(RMS) IO IFSM I2t TJ, Tstg CBR1D020S 200 200 140 CBR1D040S 400 400 280 CBR1D060S 600 600 420 1.0 50 10 CBR1D080S 800 800 560 CBR1D100S 1000 1000 700 UNITS V V V A A A2s -65 to +150 °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=Rated VRRM IR VR=Rated VRRM, TA=125°C VF IF=1.0A CJ VR=4.0V, f=1.0MHz 25 MAX 10 0.5 1.1 UNITS µA mA V pF R3 (4-January 2010) CBR1-D020S SERIES SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER SMDIP CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m R3 (4-January 2010) .


CBR1-D020S CBR1-D040S CBR1-D060S


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