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SIF7N80C Datasheet, Equivalent, POWER MOSFET.N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET |
| Part | SIF7N80C |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Feature | Shenzhen SI Semiconductors Co. , LTD. Product Specification N- MOS / N-CHANN EL POWER MOSFET SIF7N80C •： RoH S •FEATURES：■LOW THERMAL RESISTAN CE ■FAST SWITCHING ■HIGH INPUT RESI STANCE ■RoHS COMPLIANT •： •A PPLICATION: ■ELECTRONIC BALLAST ■EL ECTRONIC TRANSFORMER ■SWITCH MODE POW ER SUPPLY •（TC=25°C） •Absolu te Maximum Ratings（Tc=25°C） TO-22 0/220FP PARAMETER SYMBOL VALUE UNIT - Drain-source Voltage VDS 800 V VDS=800V - gate-source Voltage VGS ±30 V RDS(ON)=1. 9Ω Continuous Dr ain Current TC=25℃ ID 7. 0* A ID=7. 0A Continuous Drain Current TC=100 Drain Current －Pulse . |
| Manufacture | SI Semiconductors |
| Datasheet |
| Part | SIF7N80C |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Feature | Shenzhen SI Semiconductors Co. , LTD. Product Specification N- MOS / N-CHANN EL POWER MOSFET SIF7N80C •： RoH S •FEATURES：■LOW THERMAL RESISTAN CE ■FAST SWITCHING ■HIGH INPUT RESI STANCE ■RoHS COMPLIANT •： •A PPLICATION: ■ELECTRONIC BALLAST ■EL ECTRONIC TRANSFORMER ■SWITCH MODE POW ER SUPPLY •（TC=25°C） •Absolu te Maximum Ratings（Tc=25°C） TO-22 0/220FP PARAMETER SYMBOL VALUE UNIT - Drain-source Voltage VDS 800 V VDS=800V - gate-source Voltage VGS ±30 V RDS(ON)=1. 9Ω Continuous Dr ain Current TC=25℃ ID 7. 0* A ID=7. 0A Continuous Drain Current TC=100 Drain Current －Pulse . |
| Manufacture | SI Semiconductors |
| Datasheet |
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