TRANSISTORS. BLD122DL Datasheet

BLD122DL TRANSISTORS. Datasheet pdf. Equivalent

Part BLD122DL
Description TRANSISTORS
Feature Shenzhen SI Semiconductors Co., LTD. Product Specification NPN / L SERIES TRANSISTORS BLD122DL .
Manufacture SI Semiconductors
Datasheet
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Shenzhen SI Semiconductors Co., LTD. Product Specificatio BLD122DL Datasheet
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BLD122DL
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN 低压系列晶体管/ L SERIES TRANSISTORS
BLD122DL
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用: 适用于 110V 电路 节能灯 电子镇流器
■ ■APPLICATION: SUITABLE FOR 110V CIRCUIT MODE FLUORESCENT LAMP ELECTRONIC BALLAST
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
TO-92/92S/126/126S
参数
符号
额定值
单位
PARAMETER
集电极-基极电压
Collector-Base Voltage
集电极-基极电压
Collector-Emitter Voltage
集电极-基极电压
Emitter- Base Voltage
集电极-基极电压
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
400
200
9
2
UNIT
V
V
V
A
集电极-基极电压
Total Power Dissipation
集电极-基极电压
Junction Temperature
TO-92/92S:12
Ptot
TO-126/126S:20
W
Tj 150 °C
贮存温度
Storage Temperature
Tstg
-65-150
°C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
测试条件
最小值 最大值
单位
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极电压
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极-基极电压
Emitter -Base Voltage
SYMBOL
ICBO
ICEO
VCBO
VCEO
VEBO
TEST CONDITION
VCB=400V
VCE=200V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
MIN
400
200
9
MAX
100
250
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=0.5A,IB=0.1A
IC=1.5A,IB=0.5A
IC=1.5A,IB=0.5A
0.5
V
1.0
1.5 V
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
7
hFE VCE=5V,IC=0.2A 10 40
VCE=5V,IC=2A
5
贮存时间/Storage Time
内置二极管正向压降
Diode Forward Voltage
tS
VCC=5V,IC=0.25A
(UI9600)
1.5
3.0
µs
VF IF =1.0A
2.0 V
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-92 普通袋装/NORMAL PACKING
TO-92S 普通袋装/NORMAL PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
BLD122DL TO-92
BLD122DL TO-92-HF
BLD122DL TO-92S
BLD122DL TO-92S-HF
TO-92 盒式编带/AMMOPACK
BLD122DL TO-92-AP
BLD122DL TO-92-AP-HF
TO-126 普通袋装/NORMAL PACKING
TO-126S 普通袋装/NORMAL PACKING
BLD122DL TO-126
BLD122DL TO-126S
BLD122DL TO-126-HF
BLD122DL TO-126S-HF
Si semiconductors 2013.12
1



BLD122DL
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
NPN 低压系列晶体管/ L SERIES TRANSISTORS
产品规格书
Product Specification
BLD122DL
SOA (DC)
TO-126/126S
TO-92/92S
hFE
100
Tj=125
hFE - Ic
Tj=25
10 Tj= 40
%
120
100
80
60
40
20
0
0
hFE
100
PtotTj
IS/B
Ptot
50 100
hFE - Ic
150 Tj(℃) 200
Tj=125
Tj=25
10 Tj= 40
Vce=1.5V
1
0.001
0.01
0.1
Vces(v)
10
hFE=5
Vcesat - Ic
1
1 Ic(A1) 0
Tj=125
Tj=25
Tj= 40
0.1
0.01
0.1
Ic(A)
1 10
Si semiconductors 2013.12
Vce=5V
1
0.001
0.01
2.5
2
Vbes(v)
hFE=5
1.5
0.1 1
Vbesat - Ic
Ic(A)
10
Tj=25
Tj=125
Tj= 40
1
0.5
0
0.1
1 Ic(A1) 0
2





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