MJE13001AH TRANSISTORS Datasheet

MJE13001AH Datasheet, PDF, Equivalent


Part Number

MJE13001AH

Description

TRANSISTORS

Manufacture

SI Semiconductors

Total Page 4 Pages
Datasheet
Download MJE13001AH Datasheet


MJE13001AH
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS
MJE13001AH
特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
应用: 充电器 节能灯 电子镇流器
■ ■ ■APPLICATION: RECHARGER
FLUORESCENT LAMP
ELECTRONIC BALLAST
最大额定值(Ta=25°C
Absolute Maximum RatingsTa=25°C
TO-92/92S
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE UNIT
集电极-基极电压
Collector-Base Voltage
VCBO 700 V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
480
V
集电极-发射极电压
Emitter- Base Voltage
VEBO
9
V
基极电流
Base Current
Ib 100 mA
基极峰值电流
Base Peak Current
Ibm 200 mA
集电极电流
Collector Current
IC 180 mA
集电极峰值电流
Collector Peak Current
ICm 360 mA
集电极耗散功率
Total Power Dissipation
Ptot 1.0 W
最高工作温度
Junction Temperature
Tj 150 °C
贮存温度
Storage Temperature
Tstg
-65-150
°C
电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
测试条件
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
SYMBOL
ICBO
ICEO
VCBO
VCEO
VEBO
TEST CONDITION
VCB=700V
VCE=480V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
最小值
MIN
700
480
9
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=50mA,IB=10mA
IC=120mA,IB=40mA
IC=50mA,IB=10mA
0.5
V
1
1.2 V
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
7
hFE
VCE=20V,IC=20mA
15
VCE=5V,IC=180mA
5
30
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Nomal Package Material 无卤塑封料/Halogen Free
TO-92 普通袋装/NORMAL PACKING
MJE13001AH TO-92
MJE13001AH TO-92-HF
TO-92S 普通袋装/NORMAL PACKING
MJE13001AH TO-92S
MJE13001AH TO-92S-HF
TO-92 盒式编带/AMMOPACK
MJE13001AH TO-92-AP
MJE13001AH TO-92-AP-HF
Si semiconductors 2015.1

MJE13001AH
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS
产品规格书
Product Specification
MJE13001AH
SOA (DC)
hFE - Ic
%
120
100
80
60
40
20
0
0
PtotTj
IS/B
Ptot
50 100 150 Tj(℃)200
hFE - Ic
Vcesat - Ic
Vbesat - Ic
Si semiconductors 2015.1


Features Shenzhen SI Semiconductors Co., LTD. Product Specification NPN BUL / BUL SE RIES TRANSISTORS MJE13001AH ●: RoHS ■ ■ ■ ■●FEATURES: HI GH VOLTAGE CAPABILITY HIGH SPEED SWITCH ING WIDE SOA RoHS COMPLIANT ●: ■ ■●APPLICATION: RECHARGER FL UORESCENT LAMP ELECTRONIC BALLAST ● (Ta=25°C) ●Absolute Maximum Ra tings(Ta=25°C) TO-92/92S PARAMETER SYMBOL VALUE UNIT - Collec tor-Base Voltage VCBO 700 V - Collect or-Emitter Voltage VCEO 480 V - Emi tter- Base Voltage VEBO 9 V Base C urrent Ib 100 mA Base Peak Current Ibm 200 mA Collector Current IC 180 mA Collector Peak Current I .
Keywords MJE13001AH, datasheet, pdf, SI Semiconductors, TRANSISTORS, JE13001AH, E13001AH, 13001AH, MJE13001A, MJE13001, MJE1300, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)