| DatasheetsPDF.com |
FGH50T65SQD Datasheet, Equivalent, Trench IGBT.Field Stop Trench IGBT Field Stop Trench IGBT |
| Part | FGH50T65SQD |
|---|---|
| Description | Field Stop Trench IGBT |
| Feature | FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH50T65SQD
650 V, 50 A Field Stop Trench IGBT
April 2016
Features
• Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1. 6 V(Typ. ) @ IC = 50 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inve. |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part | FGH50T65SQD |
|---|---|
| Description | Field Stop Trench IGBT |
| Feature | FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH50T65SQD
650 V, 50 A Field Stop Trench IGBT
April 2016
Features
• Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1. 6 V(Typ. ) @ IC = 50 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inve. |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
|
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |