CBSL6
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL6 is Designed for
PACKAGE STYLE .230 6L FLG
A .040x45° ...
CBSL6
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI CBSL6 is Designed for
PACKAGE STYLE .230 6L FLG
A .040x45° 4X .025 R .115 .430 D E .125 G H I L F C B 2XØ.130
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCES VEBO PDISS TJ TSTG θ JC 2.4 A
DIM MINIMUM
inches / mm
J K
MAXIMUM
inches / mm
50 V 35 V 3.5 V 53 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 3.3 OC/W
O O
A B C D E F G H I J K L
.355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84
.365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60
ORDER CODE: ASI10580
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO ICEO ICBO hFE COB PG ηC IC = 5 mA IC = 5 mA IE = 5 mA VCE = 24 V VCB = 24 V VCE = 10 V VCB = 24 V
TC = 25 C
O
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
24 50 3.5 1.0 1.0
UNITS
V V V mA mA --pF dB %
IC = 0.1 A f = 1.0 MHz ICQ = 25 mA f = 960 MHz
20
100 8.5
VCC = 24 V POUT = 6.0 W
10 50
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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