FW276

Ordering number : ENA2289 FW276 N-Channel Power MOSFET 450V, 0.7A, 12.1Ω, Dual SOIC8 http://onsemi.com Features On-resistance RDS(on)=9.3Ω(typ.) Input capacitance Ciss=55pF(typ.) 10V drive Nch+Nch dual MOSFET Halogen free compliance Specifications Absolute Maximum Ratings at Tc = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (PW≤10μs) ID IDL*1 IDP Duty cycle≤1% Power Dissipation (1 unit) PD Total Power Dissipation (2 units) PT Junction Temperature Tj Storage Temperature Tstg Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds Note: *1 Package limited TL Conditions Value 450 ±30 0.7 0.35 2.8 1.6 2.0 150 - 55 to +150 260 Unit V V A A A W W °C °C °C Thermal Resistance Ratings Parameter Symbol Value Junction to Ambient (1 unit) *2 Junction to Ambient (2 units) *2 RθJA RθJA 78.1 62.5 Note: *2 Surface mounted on ceramic board using 2000mm...