NGTB30N120IHRWG

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses IH Cooker Application Reliable and Cost Effective Single Die Solution These are Pb−Free Devices Typical Applications Inductive Heating Consumer Appliances Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax, 10 ms pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limited by T...