NGTB20N135IHRWG

NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features Extremely Efficient Trench with Fieldstop Technology 1350 V Breakdown Voltage Optimized for Low Losses in IH Cooker Application Reliable and Cost Effective Single Die Solution These are Pb−Free Devices Typical Applications Inductive Heating Consumer Appliances Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES IC 1350 40 20 V A Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C ICM 120 A IF A 40...