WNM2024

WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V Descriptions The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2024 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications WNM2024 Http//:www.willsemi.com SOT-23 D 3 12 GS Pin configuration (Top view) 3 W24* 12 W24= Device Code * = Month (A~Z) Marking Order information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Device WNM2024-3/TR Package SOT-23 Shipping 3000/Reel&Tape Will Semiconductor Ltd. 1 Dec,2011 - Rev.1.1 Absolute Maximum rati...