WNM2029
Single N-Channel, 20V, 1.85A, Power MOSFET
VDS (V) 20
Rds(on) (ȍ) 0.072@ VGS=4.5V 0.088@ VGS=2.5V 0.115@ VGS=...
WNM2029
Single N-Channel, 20V, 1.85A, Power MOSFET
VDS (V) 20
Rds(on) (ȍ) 0.072@ VGS=4.5V 0.088@ VGS=2.5V 0.115@ VGS=1.8V
ID (A) 1.8 1.5 1.0
WNM2029
Http//:www.willsemi.com
Descriptions
The WNM2029 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2029 is Pb-free.
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-323
Applications
SOT-323
D 3
12 GS
Pin configuration (Top view)
3
29*
12
29 = Device Code * = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
Device WNM2029-3/TR
Package SOT-323
Shipping 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2011 - Rev.1.0
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