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WNM3008 Dataheets PDF



Part Number WNM3008
Manufacturers Will Semiconductor
Logo Will Semiconductor
Description N-Channel MOSFET
Datasheet WNM3008 DatasheetWNM3008 Datasheet (PDF)

WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V WNM3008 Http//:www.willsemi.com Descriptions The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3008 is Pb-free. Features SOT-23 D 3 12 GS Pin configuration (Top view) z T.

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WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V WNM3008 Http//:www.willsemi.com Descriptions The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3008 is Pb-free. Features SOT-23 D 3 12 GS Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging W38* W38 * = Device Code = Month Marking Order information Device Package Shipping WNM3008-3/TR SOT-23 3000/Reel&Tape Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.2 Absolute Maximum ratings Parameter Drain-Sou.


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