Document
WNM3008
Single N-Channel, 30V, 3.1A, Power MOSFET
VDS (V) 30
Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V
WNM3008
Http//:www.willsemi.com
Descriptions
The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3008 is Pb-free.
Features
SOT-23 D 3
12 GS Pin configuration (Top view)
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
W38*
W38 *
= Device Code = Month
Marking
Order information
Device
Package
Shipping
WNM3008-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.2
Absolute Maximum ratings
Parameter Drain-Sou.