Document
WNMD2154
Dual N-Channel, 20V, 0.88A, Small Signal MOSFET
VDS (V) 20
Rds(on) (ȍ)
0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V
Descriptions
The WNMD2154 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNMD2154 is Pb-free.
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-563
WNMD2154
Http//:www.willsemi.com
SOT-563
D1 G2 S2 6 54
1 23 S1 G1 D2
Pin configuration (Top view)
6 54
54*
1 23
54 = Device Code * = Month (A~Z)
Marking
Applications
z DC-DC converter circuit z Load Switch z Level Shift
Order information
Device
Package
Shipping
WNMD2154-6/TR SOT-563 3000/Reel&Tape
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.4
Absolute Maximum ratings
Parameter Drain-Source Voltage Gate-Source Vo.