WNMD2158

WNMD2158 Dual N-Channel, 20V, 7.0A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.0148@ VGS=4.5V 0.017@ VGS=3.1V 20 0.019@ VGS=2.5V ESD Rating: 2000V HBM WNMD2158 www.sh-willsemi.com Descriptions TSSOP-8L D1/D2 S2 S2 G2 8765 The WNMD2158 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2158 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package TSSOP-8L 1234 D1/D2 S1 S1 G1 Pin configuration (Top view) 8765 2158 YYWW Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging 1234 2158 = Device Code YY =Year WW =Week Marking Order information Device Package Shipping WNMD2158-8/TR TSSOP-8L 3000...