WNMD2160

WNMD2160 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.0157@ VGS=4.5V 0.018@ VGS=3.1V 20 0.020@ VGS=2.5V ESD Rating: 2000V HBM WNMD2160 Http//:www.willsemi.com Descriptions The WNMD2160 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2160 is Pb-free. Features SOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging 6 54 2160 YYWW 1 23 2160 YY WW = Device Code = Year = Week Marking Order information Device Package Shipping WNMD2160-6/TR SOT-23-6L 3...