WNMD2162

WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.016@ VGS=4.5V 0.019@ VGS=3.1V 0.022@ VGS=2.5V The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2162 is Pb-free and Halogenfree . Http//:www.willsemi.com PDFN2.9×2.8-8L D2 D2 87 D1 6 D1 5 Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN2.9×2.8-8L Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging 1 23 4 S2 G2 S1 G1 Pin configuration (Top view) 8 765 2162 YYWW 1 23 4 2162 YY WW = Device Code = Year = Week Marking Order information...