WNMD2162A
Dual N-Channel, 20V, 4.8A, Power MOSFET
VDS (V) 20
ESD Protected
Descriptions
Rds(on) (Ω) 0.014@ VGS=4.5V 0...
WNMD2162A
Dual N-Channel, 20V, 4.8A, Power MOSFET
VDS (V) 20
ESD Protected
Descriptions
Rds(on) (Ω) 0.014@ VGS=4.5V 0.015@ VGS=3.1V 0.016@ VGS=2.5V
The WNMD2162A is Dual N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2162A is Pb-free and Halogen-free.
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package PDFN2.9×2.8-8L
WNMD2162A
Http://www.sh-willsemi.com
PDFN2.9×2.8-8L
D2 D2 D1 D1 8 7 65
1 23 4 S2 G2 S1 G1
Pin configuration (Top view)
8 765
2162A YYWW
1 2 34
2162A = Device Code YY = Year WW = Week
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
Marking
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