Document
WNMD2167
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V) 20
Typical Rds(on) (Ω) 0.016@ VGS=4.5V 0.018@ VGS=3.1V 0.020@ VGS=2.5V
Descriptions
The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2167 is Pb-free.
WNMD2167
Http//:www.willsemi.com
SOT-23-6L
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
Pin configuration (Top view)
6 54
2167 YYWW
1 23
2167 = YY = WW =
Device Code Year Week
Marking
Order information
Device
Package
Shipping
WNMD2167-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconduct.