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WNMD2167 Dataheets PDF



Part Number WNMD2167
Manufacturers Will Semiconductor
Logo Will Semiconductor
Description Dual N-Channel MOSFET
Datasheet WNMD2167 DatasheetWNMD2167 Datasheet (PDF)

WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.016@ VGS=4.5V 0.018@ VGS=3.1V 0.020@ VGS=2.5V Descriptions The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2167 is Pb-free. WNMD2167 Http//:www.willsemi.com SOT-23-6L Features  Trench Tech.

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WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.016@ VGS=4.5V 0.018@ VGS=3.1V 0.020@ VGS=2.5V Descriptions The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2167 is Pb-free. WNMD2167 Http//:www.willsemi.com SOT-23-6L Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Pin configuration (Top view) 6 54 2167 YYWW 1 23 2167 = YY = WW = Device Code Year Week Marking Order information Device Package Shipping WNMD2167-6/TR SOT-23-6L 3000/Reel&Tape Will Semiconduct.


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