WNMD2168
Dual N-Channel, 20V, 4.1A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2....
WNMD2168
Dual N-Channel, 20V, 4.1A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2.5V
Descriptions
The WNMD2168 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2168 is Pb-free.
WNMD2168
Http//:www.willsemi.com
TSSOP-8L
D1/D2 S2 S2 G2
8765
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package TSSOP-8L
1234
D1/D2 S1 S1 G1
Pin configuration (Top view)
8765
2168 YYWW
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
Will Semiconductor Ltd.
1234
2168 YY WW
=Logo =Device Code = Year = Week
Marking
Order information
Device
Package
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