WNMD2166
Dual N-Channel, 20V, 4.0A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2....
WNMD2166
Dual N-Channel, 20V, 4.0A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2.5V
ID (A) 4.0 2.5 2.0
WNMD2166
Http//:www.willsemi.com
Descriptions
The WNMD2166 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2166 is Pb-free.
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
Package
G1 D1/D2 65
G2 4
1 23 S1 D1/D2 S2
Pin configuration (Top view)
6 54
2166 YYWW
1 23
2166 = Device Code YY = Year WW = Week
Marking
Order information
Device WNMD2166
Package
Shipping
SOT-23...
