WNMD2174
Dual N-Channel, 12V, 6A, Power MOSFET
Vsss (V)
Typ Rss(on) (mΩ)
19@ VGS=4.5V
20@ VGS=4.0V 12
22@ VGS=3.1V
...
WNMD2174
Dual N-Channel, 12V, 6A, Power MOSFET
Vsss (V)
Typ Rss(on) (mΩ)
19@ VGS=4.5V
20@ VGS=4.0V 12
22@ VGS=3.1V
25@ VGS=2.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2174 is Dual N-Channel enhancement MOS Field Effect
Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The WNMD2174 is available in CSP 4L package. Standard Product WNMD2174 is Pb-free and Halogen-free.
WNMD2174
www.sh-willsemi.com
MOSFET1 Gate 1
MOSFET2 Gate 2
Gate Protection Diode
Source 1
Body Diode
CSP 4L
43
Source 2
74 YW
12
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package CSP 4L
Applications
Lithium-Ion battery p...
