WNMD2179
WNMD2179
Dual N-Channel, 20V, 6.3A, Power MOSFET
www.sh-willsemi.com
VDS (V)
Rds(on) (ȍ)
0.0175@ VGS=4.5V...
WNMD2179
WNMD2179
Dual N-Channel, 20V, 6.3A, Power MOSFET
www.sh-willsemi.com
VDS (V)
Rds(on) (ȍ)
0.0175@ VGS=4.5V
0.0195@ VGS=3.1V 20
0.0215@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNMD2179 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2179 is Pb-free.
Features
TSOT-23-6L G1 D1/D2 G2 654
1 23 S1 D1/D2 S2 Pin configuration (Top view)
6 54
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package TSOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
2179
NDYW
123
2179 ND Y W
= Device Code = Special Code = Year =Week(A~z)
Marking
Order information
Device WNM...
