WPM3012

WPM3012 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.058@ VGS=10V 0.080@ VGS=4.5V Descriptions The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3012 is Pb-free and Halogen-free. WPM3012 Http//:www.willsemi.com SOT-23 D 3 12 GS Pin configuration (Top view) Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 3 W32* 12 W32= Device Code * = Month (A~Z) Marking Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Order information Device Package Shipping WPM3012-3/TR SOT-23 3000/Reel&Tape Will Semiconductor Ltd. 1 Apr, 2012 - Rev.1.1 Absolute Maxim...