MOSFET
WPMD2008
Dual P-Channel, -20 V, - 4 .1A, Power MOSFET
Description
The WPMD2008 uses advanced trench technology and desig...
Description
WPMD2008
Dual P-Channel, -20 V, - 4 .1A, Power MOSFET
Description
The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free.
Features
9%5 '66 í20 V
5'6RQ 0$;
110m¡@ í4.5V 138m¡@ í2.5V
WPMD2008
Http://www.willsemi.com
z Lowest RDS(on) Solution in 2x2 mm Package
z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level
z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
z Bidirectional Current Flow with Common Source Configuration
z DFN6 Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
Application
z Optimized for Battery and Load Management Applications in Portable Equipment
z LiíIon Battery Charging and Protection Circuits z High Power Management in Portable, Battery Powered Products
z High Side Load Switch
Order information
Part Number WPMD2008-6/TR
Part Number DFN 6
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