WPMD2013

WPMD2013 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.860@ VGS=-1.8V Descriptions The WPMD2013 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WPMD2013 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-563 WPMD2013 Http//:www.willsemi.com SOT-563 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 13* 1 23 13 = Device Code * = Month (A~Z) Marking Applications z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift Order information Device Package Shipping WPMD2013-6/TR SOT-563 3000/Reel&Tape Will Semiconductor Ltd. 1 Dec,2011 - Rev.1.3 Absolute Maximum ratings Parameter Drain-S...