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WSB5518W

WillSEMI

Schottky Barrier Diode

WSB5518W WSB5518W Middle Power Schottky Barrier Diode Features  0.5 A Average rectified forward current  Low forward...


WillSEMI

WSB5518W

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WSB5518W WSB5518W Middle Power Schottky Barrier Diode Features  0.5 A Average rectified forward current  Low forward voltage, low leakage current  Small package SOD-323 Http://www.sh-willsemi.com SOD-323 Applications  Switching circuit  Middle current rectification Circuit Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (1) Junction temperature Operating temperature Storage temperature Symbol VRRM VR IO IFSM TJ Topr Tstg Marking Value 60 60 0.5 7 125 -40 ~ 85 -55 ~ 150 Unit V V A A OC OC OC Electronics characteristics (TA=25oC) Parameter Forward voltage (2) Reverse current Junction capacitance Thermal resistance (3) Symbol VF IR CJ RθJL Condition IF=0.5A VR=60V VR=4V, F=1MHz Junction to Lead Min. - Typ. 0.5 4 34 108 Max. 0.55 100 135 Unit V uA pF K/W Order Informations Device WSB5518W-2/TR Package SOD-323 Marking *8 (4) Shipping 3000/Reel&Tape Not...




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