WSB5543W

WSB5543W Middle Power Schottky Barrier Diode Features  1.0A Average rectified forward current  Trench MOS Schottky technology  Low forward voltage,low leakage current  Small package SOD-323F Applications  Switching circuit  Middle current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(1) Forward peak surge current(2) Junction temperature Operating temperature Storage temperature WSB5543W Http://www.sh-willsemi.com SOD-323F Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 1.0 7 -55 ~ 150 -55 ~ 150 -55 ~ 150 Unit V V A A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Forward voltage(3) Reverse current Junction capacitance Thermal resistance(4) VF IR CJ RθJSP IF=1.0A VR=VR VR=1V, F=1MHz Junction to Soldering point Min. - Typ. 0.48 8 80 - Max. 0.57 50 60 Unit V uA pF K/W Order Informations Device Package WSB5543W-2/TR ...